Infineon CoolMOS™ G7, N-Channel MOSFET, 600 V Vdss, 29 A Id, 80 mOhm Rds(on) @ 10 V, 42 nC Qg, PG-HSOF-8-2 package, -40°C to 150°C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ G7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 29A (Tc) |
| Power dissipation | 167W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 4V @ 490µA |
| Rds on (Max) @ id, vgs | 80mOhm @ 9.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1640 pF @ 400 V |
IPT60R080G7XTMA1 total gate charge is 42 nC at Vgs = 10 V. Input capacitance is 1640 pF at 400 V drain-source.
Housed in the PG-HSOF-8-2 package (8-PowerSFN), this is a surface-mount power package with an exposed drain pad. Maximum power dissipation is 167 W at case temperature Tc. The package is lead-free and RoHS3 compliant per the listing.
The part is ROHS3 compliant.