Infineon CoolMOS™ G7 series, N-Channel MOSFET, 600 V drain-source, 44 A continuous drain, 50 mOhm max Rds(on) at 10 V gate drive, 8-PowerSFN surface-mount package (PG-HSOF-8-2), -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ G7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 44A (Tc) |
| Power dissipation | 245W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 4V @ 800µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 15.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2670 pF @ 400 V |
The IPT60R050G7XTMA1: Housed in an 8-PowerSFN (PG-HSOF-8-2) surface-mount package, this MOSFET relies on the PCB copper and thermal vias to pull heat from the exposed pad. No lab bench needed for the swap, but the board layout has to be right from the start.
Targets the 600 V class of power conversion: server and telecom PSUs, solar inverters, EV onboard chargers, and industrial motor drives.
Yes, it is ROHS3 compliant.