IPT60R028G7XTMA1

Infineon Technologies · CoolMOS™ G7 Series

Infineon CoolMOS™ G7, N-Channel MOSFET, 600 V Vdss, 75 A Id @ 25°C, 28 mOhm Rds(on) @ 28.8 A, 10 V, PG-HSOF-8-2, Surface Mount, -55°C to 150°C.

Infineon Technologies IPT60R028G7XTMA1
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[IN STOCK] In Stock: 6 pcs
$20.94/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPT60R028G7XTMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ G7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation391W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id4V @ 1.44mA
Rds on (Max) @ id, vgs28mOhm @ 28.8A, 10V
Gate charge (Qg) (Max) @ vgs123 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4820 pF @ 400 V

Technical details

Thermal and package realities

The IPT60R028G7XTMA1: The PG-HSOF-8-2 can sink 391 W dissipation at the case — but that number assumes an ideal thermal interface and a cold plate. In a real layout, the 75 A continuous rating is thermally limited; the engineer sizes the copper area under the drain pad and the heatsinking path accordingly. The ±20 V Vgs max leaves headroom for gate-drive overshoot, though 10 V is the recommended drive for the rated Rds(on).

Active product status, ROHS3 compliant. No direct pin-compatible second source is listed in the evidence.

IPT60R028G7XTMA1
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