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Infineon Technologies IPT60R028G7XTMA1

Infineon IPT60R028G7XTMA1 CoolMOS G7 N-Ch 600V 75A MOSFET

MPNIPT60R028G7XTMA1
End of Life

Infineon CoolMOS™ G7, N-Channel MOSFET, 600 V Vdss, 75 A Id @ 25°C, 28 mOhm Rds(on) @ 28.8 A, 10 V, PG-HSOF-8-2, Surface Mount, -55°C to 150°C.

$22.83Ref. price · indicative, final on quote
Infineon Technologies IPT60R028G7XTMA1 datasheet (PDF)
Packaging8-PowerSFN
RoHSROHS3 Compliant
SeriesCoolMOS™ G7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPT60R028G7XTMA1 specifications
ParameterValue
SeriesCoolMOS™ G7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation391W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id4V @ 1.44mA
Rds on (Max) @ id, vgs28mOhm @ 28.8A, 10V
Gate charge (Qg) (Max) @ vgs123 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4820 pF @ 400 V

Product details

Thermal and package realities

The IPT60R028G7XTMA1: The PG-HSOF-8-2 can sink 391 W dissipation at the case — but that number assumes an ideal thermal interface and a cold plate. In a real layout, the 75 A continuous rating is thermally limited; the engineer sizes the copper area under the drain pad and the heatsinking path accordingly. The ±20 V Vgs max leaves headroom for gate-drive overshoot, though 10 V is the recommended drive for the rated Rds(on).

Active product status, ROHS3 compliant. No direct pin-compatible second source is listed in the evidence.

Frequently asked questions

Is IPT60R028G7XTMA1 active or obsolete?

Active. The product status is listed as Active, with no last-time-buy or end-of-life notice. It is a current-production CoolMOS G7 device.

What is the Rds(on) and what does it mean for my design?

Max Rds(on) is 28 mOhm at 28.8 A drain current with a 10 V gate drive. That is a low conduction-loss figure for a 600 V MOSFET — at 28.8 A the dissipation is roughly 23 W from Rds(on) alone. It keeps the heatsink manageable in a 75 A-rated part, but the designer must still account for the 123 nC gate charge when sizing the gate-drive circuit.