Infineon OptiMOS™ IPT111N20NFDATMA1, N-channel MOSFET, 200 V Vdss, 96 A Id, 11.1 mOhm Rds(on) at 10 V, 87 nC Qg, -55 to 175 °C Tj, 8-PowerSFN (PG-HSOF-8-1) package.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 96A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 4V @ 267µA |
| Rds on (Max) @ id, vgs | 11.1mOhm @ 96A, 10V |
| Gate charge (Qg) (Max) @ vgs | 87 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7000 pF @ 100 V |
The IPT111N20NFDATMA1: Total gate charge is 87 nC at 10 V. Input capacitance is 7000 pF at 100 V drain bias.
The 8-PowerSFN package (PG-HSOF-8-1) is a surface-mount, exposed-pad design. The ±20 V maximum gate-source voltage means the gate driver supply rail must be regulated; a 10 V rail is the target for minimum Rds(on).
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