IPT059N15N3ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPT059N15N3ATMA1, N-Channel MOSFET, 150V Vdss, 155A Id, 5.9mOhm Rds(on) at 150A/10V, 92nC Qg, 7200pF Ciss, PG-HSOF-8-1, -55°C to 175°C.

Infineon Technologies IPT059N15N3ATMA1
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[IN STOCK] In Stock: 139 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPT059N15N3ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C155A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs5.9mOhm @ 150A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7200 pF @ 75 V

Technical details

150 V, 5.9 mOhm — the conduction-loss floor for a 48 V bus

The 8-PowerSFN package (PG-HSOF-8-1) keeps the source inductance low and the thermal path short to the PCB pad.

The 8 V to 10 V drive-voltage window means the part reaches its minimum Rds(on) with a standard 10 V gate rail, but a logic-level 8 V supply still achieves the rated on-resistance.

Temperature range and package — design-in checklist

Maximum power dissipation is 375 W at the case — a figure that assumes an ideal heatsink; real-world derating follows the junction-to-case thermal resistance. The PG-HSOF-8-1 package is a surface-mount can with a large exposed drain pad; the PCB copper area and via count under that pad set the effective RthJA. ROHS3 compliance is confirmed.

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