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Infineon Technologies IPT059N15N3ATMA1

IPT059N15N3ATMA1 OptiMOS™ N-Ch 150V 155A MOSFET, 5.9mOhm

MPNIPT059N15N3ATMA1
End of Life

Infineon OptiMOS™ IPT059N15N3ATMA1, N-Channel MOSFET, 150V Vdss, 155A Id, 5.9mOhm Rds(on) at 150A/10V, 92nC Qg, 7200pF Ciss, PG-HSOF-8-1, -55°C to 175°C.

$8.54Ref. price · indicative, final on quote
Packaging8-PowerSFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPT059N15N3ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C155A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSFN
Vgs(th) (Max) @ id4V @ 270µA
Rds on (Max) @ id, vgs5.9mOhm @ 150A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7200 pF @ 75 V

Product details

150 V, 5.9 mOhm — the conduction-loss floor for a 48 V bus

Its maximum on-resistance of 5.9 mOhm at 150 A, 10 V gate drive sets the conduction-loss floor for a high-current switching regulator or motor-drive output stage. The 8-PowerSFN package (PG-HSOF-8-1) keeps the source inductance low and the thermal path short to the PCB pad.

Total gate charge is 92 nC at 10 V, and the input capacitance (Ciss) is 7200 pF at 75 V drain bias. For a 100 kHz switching frequency, the average gate-drive current is 9.2 mA; the driver must also supply the peak current to charge Ciss within the desired turn-on time. The 8 V to 10 V drive-voltage window means the part reaches its minimum Rds(on) with a standard 10 V gate rail, but a logic-level 8 V supply still achieves the rated on-resistance.

Temperature range and package — design-in checklist

Maximum power dissipation is 375 W at the case — a figure that assumes an ideal heatsink; real-world derating follows the junction-to-case thermal resistance. The PG-HSOF-8-1 package is a surface-mount can with a large exposed drain pad; the PCB copper area and via count under that pad set the effective RthJA. ROHS3 compliance is confirmed.

Lifecycle and sourcing

No official second-source or pin-compatible alternate is listed in the Infineon cross-reference for this package variant.

Frequently asked questions

Can IPT059N15N3ATMA1 be used in a 48V DC-DC converter design?

Yes. The 150 V Vdss rating provides a 3:1 margin over a 48 V nominal bus, covering transients and load dump. The 5.9 mOhm Rds(on) keeps conduction losses low at the tens-of-amps output typical of a 48 V to 12 V or 48 V to 5 V stage.

Is IPT059N15N3ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant per the Infineon lifecycle record.