100 V, 1.75 mOhm — StrongIRFET™ 2 power switch
The IPT017N10NF2SATMA1 is a 100 V N-Channel StrongIRFET™ 2 MOSFET in a PG-HSOF-8 surface-mount package.
Conduction loss and gate-drive budget
At 150 A and 10 Vgs, the 1.75 mOhm Rds(on) produces a conduction loss of about 39 W — the dominant term in a hard-switched design. The 195 nC total gate charge at 10 V sets the gate-drive power: at 100 kHz switching, the average gate current is roughly 19.5 mA, and the peak current during the Miller plateau depends on the driver's source/sink capability. The 9300 pF input capacitance at 50 V Vds influences the turn-on delay and the driver's ability to charge Ciss quickly.
Current handling and thermal limits
Continuous drain current is rated at 33 A with the device at 25°C ambient (Ta) and 294 A when the case is held at 25°C (Tc). The 300 W power dissipation at Tc is the thermal budget for the package — a heatsink that keeps the case temperature low is required to use the full 294 A rating.
Lifecycle and procurement posture
It is ROHS3 compliant.