Infineon StrongIRFET™ 2, IPT015N10NF2SATMA1, N-Channel MOSFET, 100 V, 315 A, 1.5 mOhm at 10 V, 242 nC gate charge, PG-HSOF-8, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | StrongIRFET™ 2 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Ta), 315A (Tc) |
| Power dissipation | 3.8W (Ta), 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerSFN |
| Vgs(th) (Max) @ id | 3.8V @ 267µA |
| Rds on (Max) @ id, vgs | 1.5mOhm @ 150A, 10V |
| Gate charge (Qg) (Max) @ vgs | 242 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11000 pF @ 50 V |
The IPT015N10NF2SATMA1: Total gate charge is 242 nC at 10 V. Input capacitance Ciss is 11000 pF at 50 V drain-source.
Junction temperature spans -55 to 175 °C. Maximum power dissipation is 300 W at the case.
The 8-PowerSFN package (PG-HSOF-8) is a surface-mount power package with an exposed drain pad.
Maximum on-resistance is 1.5 mOhm at 150 A drain current with 10 V gate drive. This is the spec to use for conduction-loss calculations at rated current.