100 V, 300 A N-channel — the conduction-loss floor
The Infineon IPT015N10N5ATMA1 is an OptiMOS N-channel power MOSFET rated for 100 V drain-source and 300 A continuous drain current at a 25°C case temperature.
Gate charge and the driver it needs
Total gate charge is 211 nC at 10 V. That is not a trivial load — a gate driver must source several amperes peak to switch this FET in the tens of nanoseconds. If your driver is marginal on peak current, the switching edges slow, and the device spends more time in the linear region, which burns the thermal margin you thought you had from the 1.5 mOhm Rds(on). The input capacitance is 16000 pF at 50 V Vds. That capacitance, together with the gate charge, determines the drive power at frequency. At 100 kHz switching, the gate-drive loss alone is about 0.2 W — manageable, but it adds to the total dissipation in the driver IC.
175°C junction — where it lives
That 175°C ceiling qualifies it for under-hood automotive and industrial environments. The 375 W power dissipation at case temperature is a package limit.
Listed as Active in production.
PG-HSOF-8-1 — what the footprint needs
Surface-mount in an 8-PowerSFN package, supplier device package PG-HSOF-8-1. The gate drive voltage is specified at 6 V minimum for the rated Rds(on); 10 V is the standard drive level for the 1.5 mOhm figure.