IPSA70R750P7SAKMA1

Infineon Technologies · CoolMOS™ P7 Series

Infineon CoolMOS™ P7 series, IPSA70R750P7SAKMA1, N-channel MOSFET, 700 V Vdss, 6.5 A Id, 750 mOhm Rds(on) at 10 V, 8.3 nC Qg, PG-TO251-3 through-hole package, -40 to 150 °C junction.

Infineon Technologies IPSA70R750P7SAKMA1
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Technical specifications

IPSA70R750P7SAKMA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.5A (Tc)
Power dissipation34.7W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id3.5V @ 70µA
Rds on (Max) @ id, vgs750mOhm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs8.3 nC @ 400 V
Input capacitance (Ciss) (Max) @ vds306 pF @ 400 V

Technical details

The input capacitance is 306 pF at 400 V, so the controller's drive current budget for the target frequency is straightforward to verify.

The through-hole PG-TO251-3 package (IPak, three short leads) is a common footprint for low-power offline converters where a surface-mount part would complicate thermal management on a single-sided board. The 34.7 W maximum power dissipation at the case gives a realistic derating ceiling for a 25 °C ambient in still air.

The 150 °C ceiling is the absolute limit for the silicon — the designer should keep TJ below 125 °C for long-term reliability in continuous operation. The gate threshold voltage maximum is 3.5 V at 70 µA drain current, so a 10 V gate drive provides a healthy overdrive margin that minimises Rds(on) variation across temperature and unit-to-unit spread.

IPSA70R750P7SAKMA1
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