Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V Vdss, 6 A continuous drain, 900 mOhm Rds(on) at 10 V, PG-TO251-3 through-hole package, -40 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 700 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 30.5W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 3.5V @ 60µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 211 pF @ 400 V |
The IPS70R900P7SAKMA1: The 700 V Vdss gives you a solid margin on a 400 V DC bus — typical in power-factor-correction stages and flyback converters — without pushing the derating curve. Input capacitance is 211 pF at 400 V Vds — that's the Miller plateau charge the driver has to push, and it's small enough to keep switching losses in check for a 700 V part.
If you're qualifying a new BOM, this is a current-production device you can design in without worrying about a sudden EOL.
No official pin-compatible alternate is listed in the Infineon cross-reference for this specific order code. Within the CoolMOS™ P7 family, other 700 V devices with different Rds(on) and current ratings share the same PG-TO251-3 footprint, but verify the gate charge and thermal performance against your load before substituting.
Yes, it is ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive.
Maximum power dissipation is 30.5 W at the case temperature (Tc). Derate this for higher ambient temperatures and account for the junction-to-case thermal resistance in your heatsink design.