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Infineon Technologies IPS70R900P7SAKMA1

Infineon IPS70R900P7SAKMA1 CoolMOS P7 N-Ch 700V 6A MOSFET

MPNIPS70R900P7SAKMA1
End of Life

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V Vdss, 6 A continuous drain, 900 mOhm Rds(on) at 10 V, PG-TO251-3 through-hole package, -40 to 150 °C junction temperature.

$0.97Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPS70R900P7SAKMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation30.5W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id3.5V @ 60µA
Rds on (Max) @ id, vgs900mOhm @ 1.1A, 10V
Gate charge (Qg) (Max) @ vgs6.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds211 pF @ 400 V

Product details

What the key ratings mean for the BOM

The IPS70R900P7SAKMA1: The 700 V Vdss gives you a solid margin on a 400 V DC bus — typical in power-factor-correction stages and flyback converters — without pushing the derating curve. At 1.1 A drain current with 10 V gate drive the Rds(on) is 900 mOhm max; that's the number to plug into your conduction-loss calculation at full load. The 6.8 nC gate charge is low enough that a standard MOSFET driver IC can hit the switching frequency without excessive dissipation in the driver. Input capacitance is 211 pF at 400 V Vds — that's the Miller plateau charge the driver has to push, and it's small enough to keep switching losses in check for a 700 V part.

Lifecycle and compliance

It's ROHS3 compliant, so it passes the material declaration for EU and most global markets. The series is CoolMOS™ P7, Infineon's mainstream high-voltage MOSFET platform; replacements and second sources within the same voltage and Rds(on) class exist, but no direct pin-compatible alternate is listed in the official cross-reference. If you're qualifying a new BOM, this is a current-production device you can design in without worrying about a sudden EOL.

Frequently asked questions

What is the closest pin-compatible alternative to IPS70R900P7SAKMA1?

No official pin-compatible alternate is listed in the Infineon cross-reference for this specific order code. Within the CoolMOS™ P7 family, other 700 V devices with different Rds(on) and current ratings share the same PG-TO251-3 footprint, but verify the gate charge and thermal performance against your load before substituting.

Is IPS70R900P7SAKMA1 RoHS compliant?

Yes, it is ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive.

What is the power dissipation of IPS70R900P7SAKMA1?

Maximum power dissipation is 30.5 W at the case temperature (Tc). Derate this for higher ambient temperatures and account for the junction-to-case thermal resistance in your heatsink design.