700 V N-channel for high-voltage switched-mode supplies
The Infineon IPS70R600P7SAKMA1 is a 700 V N-channel power MOSFET from the CoolMOS P7 series, built on a charge-compensation superjunction technology that cuts the on-resistance per silicon area compared to planar MOSFETs of the same voltage class. The 10.5 nC total gate charge at 10 V keeps the gate-drive power manageable in hard-switched topologies.
Through-hole TO-251-3 package and thermal path
Housed in a PG-TO251-3 through-hole package with short leads (IPak), the IPS70R600P7SAKMA1 is designed for board-level mounting where the tab is soldered to a copper pad on the PCB — the thermal resistance to ambient depends on the pad area and airflow, not the package alone. The 43 W power dissipation rating at case temperature (Tc) assumes an infinite heatsink; in practice the designer must derate based on the actual junction-to-ambient thermal resistance of the board layout.
Active lifecycle and compliance
ROHS3 compliant, meeting the current EU restriction-of-hazardous-substances directive for lead-free soldering processes.
Parametric contrast with a surface-mount sibling
The closest peer in the Infineon portfolio is the IPD50R950CEAUMA1, a 500 V CoolMOS CE series device in a surface-mount package. The IPS70R600P7SAKMA1 carries a 200 V higher drain-source breakdown (700 V vs 500 V), nearly double the continuous current rating (8.5 A vs 4.3 A), and a lower Rds(on) (600 mOhm vs 950 mOhm). The IPD50R950CEAUMA1 uses a wider ±20 V gate drive and operates down to -55°C, but the IPS70R600P7SAKMA1's through-hole package suits designs where the MOSFET is heatsunk to the chassis or a large copper pour — not a direct second-source, but a functional alternative if the voltage and current headroom align.