700 V superjunction MOSFET for offline power stages
The IPS70R360P7SAKMA1: Built on Infineon's superjunction technology, this MOSFET delivers a low gate charge of 16.4 nC at 10 V, which reduces switching losses and allows smaller gate-driver components.
Rds(on) is 360 mOhm at 10 V gate drive. Conduction loss at 3 A must be derated against the 59.5 W maximum power dissipation at the case and the 150°C junction limit. The 16.4 nC total gate charge at 10 V means a 100 mA gate driver can switch this FET in about 164 ns, keeping cross-conduction losses low in hard-switched topologies running at 65 kHz or 100 kHz. Input capacitance is 517 pF at 400 V drain-source, which is low enough that the driver's output impedance dominates the switching speed rather than the Miller plateau charge.
Through-hole TO-251: thermal and assembly fit
The through-hole mounting suits wave-solder assembly and applications where board-level vibration resistance matters more than pick-and-place throughput.