Infineon CoolMOS™PFD7 series, N-Channel MOSFET, 650 Vdss, 4.7 A Id, 1 Ω Rds(on) @ 10 V, 6 nC gate charge, PG-TO251-3 through-hole, -40 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™PFD7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4.7A (Tc) |
| Power dissipation | 26W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4.5V @ 50µA |
| Rds on (Max) @ id, vgs | 1Ohm @ 1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 230 pF @ 400 V |
The IPS60R1K0PFD7SAKMA1: Maximum on-resistance is 1 Ω at 10 V gate drive with 1 A drain current. Gate charge totals 6 nC at 10 V.
Junction temperature range spans -40 to 150 °C. Maximum power dissipation is 26 W at case temperature.
No last-time-buy or discontinuation notice is in effect. For BOM freeze and long-life designs, this MOSFET can be specified without near-term obsolescence risk.
Maximum Rds(on) is 1 Ω at 10 V gate drive with 1 A drain current. Gate charge is 6 nC at 10 V. These two numbers define the conduction loss and switching loss in a typical flyback or PFC stage.
Pricing is quoted on request against an RFQ. The page does not display a per-unit price. Contact the distributor for a firm quote at your target volume.
Both are 650 V N-channel MOSFETs in similar through-hole packages. The IPS60R1K0PFD7SAKMA1 has a 1 Ω Rds(on) versus the STP4NK60Z's typical 2.5 Ω, and a lower gate charge. Verify the gate-drive voltage, pinout, and footprint compatibility against your specific board layout before substitution.
Lead time is confirmed at quote time. Submit an RFQ for current lead-time information; it varies with factory loading and distribution stock levels.
Yes, Infineon lists the part as ROHS3 compliant.