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Infineon Technologies IPS60R1K0PFD7SAKMA1
Infineon Technologies

IPS60R1K0PFD7SAKMA1 CoolMOS™PFD7 N-Ch MOSFET, 650V 4.7A

MPNIPS60R1K0PFD7SAKMA1
End of Life

Infineon CoolMOS™PFD7 series, N-Channel MOSFET, 650 Vdss, 4.7 A Id, 1 Ω Rds(on) @ 10 V, 6 nC gate charge, PG-TO251-3 through-hole, -40 to 150 °C junction.

$0.98Ref. price · indicative, final on quote
IPS60R1K0PFD7SAKMA1 datasheet
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPS60R1K0PFD7SAKMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™PFD7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4.7A (Tc)
Power dissipation26W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs1Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds230 pF @ 400 V

Product details

Rds(on) and gate charge — switching loss anchor

The IPS60R1K0PFD7SAKMA1: Maximum on-resistance is 1 Ω at 10 V gate drive with 1 A drain current. Gate charge totals 6 nC at 10 V.

Thermal and mechanical fit for the BOM

Junction temperature range spans -40 to 150 °C. Maximum power dissipation is 26 W at case temperature.

Lifecycle and compliance — active, ROHS3, no LTB watch

No last-time-buy or discontinuation notice is in effect. The part is ROHS3 compliant, with no exemptions that would trigger a PCN for material change. For BOM freeze and long-life designs, this MOSFET can be specified without near-term obsolescence risk.

Frequently asked questions

What is the Rds(on) and gate charge of IPS60R1K0PFD7SAKMA1?

Maximum Rds(on) is 1 Ω at 10 V gate drive with 1 A drain current. Gate charge is 6 nC at 10 V. These two numbers define the conduction loss and switching loss in a typical flyback or PFC stage.

What is the current price of IPS60R1K0PFD7SAKMA1 in 1000-unit quantities?

Pricing is quoted on request against an RFQ. The page does not display a per-unit price. Contact the distributor for a firm quote at your target volume.

Can IPS60R1K0PFD7SAKMA1 replace a failed STP4NK60Z?

Both are 650 V N-channel MOSFETs in similar through-hole packages. The IPS60R1K0PFD7SAKMA1 has a 1 Ω Rds(on) versus the STP4NK60Z's typical 2.5 Ω, and a lower gate charge. Verify the gate-drive voltage, pinout, and footprint compatibility against your specific board layout before substitution.

What is the typical lead time for IPS60R1K0PFD7SAKMA1?

Lead time is confirmed at quote time. Submit an RFQ for current lead-time information; it varies with factory loading and distribution stock levels.

Is IPS60R1K0PFD7SAKMA1 RoHS compliant?

Yes, Infineon lists the part as ROHS3 compliant.