Through-hole CoolMOS for 30 V load switching
The IPS105N03LG: It is designed for moderate-current 30 V rail switching where low on-resistance and fast switching are needed. Gate charge is 14 nC at 10 V.
175 °C junction — thermal headroom for tight enclosures
This gives extra margin in high-ambient environments such as under-hood automotive or sealed power supplies where the case temperature can climb. Maximum power dissipation is 38 W at case temperature Tc. The TO-251 package's exposed tab must be soldered to a sufficient copper area on the PCB to keep the junction below the 175 °C limit under sustained load.
Gate drive and switching profile
The device is specified for gate drive voltages of 4.5 V and 10 V, with the 10.5 mOhm Rds(on) achieved at 10 V. At 4.5 V the on-resistance will be higher. Maximum gate-source voltage is ±20 V. Input capacitance Ciss is 1500 pF typical at 15 V drain-source. Combined with the 14 nC gate charge, the gate driver sees a moderate capacitive load.
Active production, ROHS3 compliant
It is ROHS3 compliant.