800 V N-channel MOSFET for high-voltage switching
Its 800 V drain-source breakdown and 7 A continuous drain current target the primary-side switch in offline flyback converters, PFC boost stages, and auxiliary power supplies where the DC bus sits at 400 V or higher.
Total gate charge is 17 nC at 10 V, which is low for an 800 V rated device. A standard gate driver delivering 1 A can switch this MOSFET in under 20 ns, keeping crossover losses low in hard-switched topologies up to about 100 kHz. The input capacitance of 460 pF at 500 V means the driver sees a light capacitive load — no special high-current buffer needed for moderate frequencies.