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Infineon Technologies IPP80R280P7XKSA1

Infineon IPP80R280P7XKSA1 CoolMOS™ N-Ch MOSFET, 800 V, 17 A

MPNIPP80R280P7XKSA1
End of Life

Infineon CoolMOS™ series, IPP80R280P7XKSA1, N-Channel MOSFET, 800 V Vdss, 17 A Id, 280 mOhm Rds(on) @ 10 V, 36 nC Qg, TO-220-3 package, -55°C to 150°C junction temperature.

$3.04Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP80R280P7XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation101W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 360µA
Rds on (Max) @ id, vgs280mOhm @ 7.2A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 500 V

Product details

800 V CoolMOS™ — the high-voltage switching workhorse

The TO-220-3 through-hole package suits designs where the heatsink mounts directly to the tab and the board sees the mechanical load.

280 mOhm Rds(on) — conduction loss budget for 7.2 A

At 7.2 A drain current and 10 V gate drive, the maximum on-resistance is 280 mOhm. That translates to about 14.5 W conduction loss at 7.2 A — within the 101 W power dissipation limit at the case, but the junction-to-case thermal path needs a heatsink sized for the duty cycle. The 36 nC total gate charge at 10 V means the gate driver sees a moderate capacitive load; a 1 A driver switches the gate in roughly 36 ns, which keeps cross-conduction losses low in a hard-switched topology.

Temperature range and thermal design

The 101 W maximum power dissipation at the case assumes an infinite heatsink; real-world designs derate that figure per the thermal resistance of the chosen heatsink and the ambient temperature. The 3.5 V maximum gate threshold at 360 µA drain current means the device turns on reliably with a 5 V gate drive signal, though the 10 V drive voltage is needed to reach the rated on-resistance.

Frequently asked questions

What is the maximum power dissipation of IPP80R280P7XKSA1?

The maximum power dissipation is 101 W at the case temperature. This figure assumes an ideal heatsink; the actual dissipation limit depends on the junction-to-case thermal resistance and the heatsink's thermal impedance to ambient.