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Infineon Technologies IPP80R280P7XKSA1

Infineon IPP80R280P7XKSA1 CoolMOS™ N-Ch MOSFET, 800 V, 17 A

MPNIPP80R280P7XKSA1
End of Life

Infineon CoolMOS™ series, IPP80R280P7XKSA1, N-Channel MOSFET, 800 V Vdss, 17 A Id, 280 mOhm Rds(on) @ 10 V, 36 nC Qg, TO-220-3 package, -55°C to 150°C junction temperature.

$3.04Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP80R280P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation101W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 360µA
Rds on (Max) @ id, vgs280mOhm @ 7.2A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1200 pF @ 500 V

Product details

800 V CoolMOS™ — the high-voltage switching workhorse

The TO-220-3 through-hole package suits designs where the heatsink mounts directly to the tab and the board sees the mechanical load.

That translates to about 14.5 W conduction loss at 7.2 A — within the 101 W power dissipation limit at the case, but the junction-to-case thermal path needs a heatsink sized for the duty cycle.

Temperature range and thermal design

The 3.5 V maximum gate threshold at 360 µA drain current means the device turns on reliably with a 5 V gate drive signal, though the 10 V drive voltage is needed to reach the rated on-resistance.

Frequently asked questions

What is the maximum power dissipation of IPP80R280P7XKSA1?

The maximum power dissipation is 101 W at the case temperature. This figure assumes an ideal heatsink; the actual dissipation limit depends on the junction-to-case thermal resistance and the heatsink's thermal impedance to ambient.