Infineon Technologies · CoolMOS™ Series
Infineon CoolMOS™ IPP80R1K4P7XKSA1, N-Channel Super Junction MOSFET, 800 V Vdss, 4 A Id, 1.4 Ohm Rds(on), 10 nC Qg, TO-220-3 through-hole, -55 to 150 °C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Super Junction |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 70µA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 1.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 250 pF @ 500 V |
Total gate charge is 10 nC at 10 V. Input capacitance is 250 pF at 500 V drain-source.
Maximum power dissipation is 32 W at case temperature.
The RoHS status (ROHS3 Compliant) covers the full substance restriction set — no red-flag exemptions expiring soon. For BOM freeze or PCN watch, this part sits in Infineon's CoolMOS™ 800 V portfolio, which has a history of long production runs.