40 V, 80 A N-channel CoolMOS™ in a TO-220-3
The Infineon IPP80N04S304AKSA1 is a 40 V, 80 A N-channel CoolMOS™ power MOSFET in a through-hole PG-TO220-3-1 package. It is designed for high-efficiency switching in automotive and industrial power stages where low conduction loss and high junction temperature tolerance are required.
Gate charge and switching budget
Total gate charge is 80 nC at 10 V. Input capacitance is 5200 pF at 25 V drain-source.
175°C junction — where it matters
The junction temperature rating is 175°C. Maximum power dissipation is 136 W at case temperature, derated above that point per the datasheet curve. The PG-TO220-3-1 package with a proper heatsink and thermal interface material is the expected mounting method — the tab is the drain and carries the bulk of the thermal path.
