What the 80 mOhm Rds(on) means for your power stage
The IPP80CN10NGXKSA1: At 13 A, that resistance dissipates roughly 13.5 W — well within the 31 W package limit, but the designer should still budget the thermal path through the TO-220-3 tab to a heatsink.
Gate charge and switching speed trade-off
With a typical gate charge of 11 nC at 10 V, this MOSFET switches cleanly with a modest gate driver. The 716 pF input capacitance at 50 V drain-source confirms it is not a high-speed switcher — expect tens to low hundreds of kHz switching frequency, not MHz. The ±20 V maximum gate rating gives headroom for driving the gate above the 10 V recommended drive level without worrying about oxide breakdown.
Temperature range and environment
The 4 V maximum gate threshold at 12 µA drain current means a 10 V drive is the practical minimum for full enhancement.