IPP77N06S212AKSA2

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ IPP77N06S212AKSA2, N-Channel MOSFET, 55 V Vds, 77 A continuous drain, 12 mOhm Rds(on) @ 38 A, 10 V Vgs, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IPP77N06S212AKSA2
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Technical specifications

IPP77N06S212AKSA2 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C77A (Tc)
Power dissipation158W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 93µA
Rds on (Max) @ id, vgs12mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1770 pF @ 25 V

Technical details

55 V, 77 A, 12 mOhm — the conduction-loss floor

The IPP77N06S212AKSA2: Gate drive is specified at 10 V for the rated Rds(on), with a maximum gate-source voltage of ±20 V.

175°C junction — where the thermal margin lives

That 175°C ceiling is 25°C higher than the typical industrial 150°C limit, which means the part can sustain higher case temperatures or a smaller heatsink before hitting the derating curve — useful in motor-drive cabinets or under-hood environments where ambient air runs hot. Maximum power dissipation is 158 W at the case (Tc). The TO-220-3 package (PG-TO220-3-1) is a through-hole leadform that bolts to a heatsink with the tab as the drain node — standard for this current class, and the package itself is not the thermal bottleneck; the interface to the heatsink is.

IPP77N06S212AKSA2
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