Skip to main content
Infineon Technologies IPP65R660CFD
Infineon Technologies

Infineon IPP65R660CFD N-Channel Power MOSFET, 650 V, 6 A

MPNIPP65R660CFD
End of Life

Infineon CoolMOS N-Channel Power MOSFET, 650 V drain-source, 6 A continuous drain, 660 mOhm on-resistance at 10 V gate drive, 22 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$0.65Ref. price · indicative, final on quote
IPP65R660CFD datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP65R660CFD Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation62.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 200µA
Rds on (Max) @ id, vgs660mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds615 pF @ 100 V

Product details

660 mOhm Rds(on) — conduction loss budget

The IPP65R660CFD: Rds(on) is 660 mOhm at 2.1 A, 10 V gate drive. The 62.5 W power dissipation rating at case temperature provides headroom for a heatsink in continuous operation.

22 nC gate charge — drive stage sizing

Total gate charge is 22 nC at 10 V, with an input capacitance of 615 pF at 100 V drain-source. This low Qg suits medium-frequency switching (typically 50–150 kHz) without requiring a high-current gate driver. A standard 1 A driver can charge the gate in under 30 ns, keeping switching losses manageable. The ±20 V maximum gate rating allows direct drive from a 12 V or 15 V regulated supply without external clamping.

Frequently asked questions

Is IPP65R660CFD compatible with 5V gate drive?

The gate threshold voltage is 4.5 V maximum at 200 µA drain current, but the Rds(on) is specified at 10 V drive. At 5 V gate drive the on-resistance will be significantly higher than the 660 mOhm maximum — expect 2–3× the rated value. For full performance, use a 10 V gate drive as recommended.