Infineon CoolMOS N-Channel Power MOSFET, 650 V drain-source, 6 A continuous drain, 660 mOhm on-resistance at 10 V gate drive, 22 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 200µA |
| Rds on (Max) @ id, vgs | 660mOhm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 615 pF @ 100 V |
The IPP65R660CFD: Rds(on) is 660 mOhm at 2.1 A, 10 V gate drive.
This low Qg suits medium-frequency switching (typically 50–150 kHz) without requiring a high-current gate driver. A standard 1 A driver can charge the gate in under 30 ns, keeping switching losses manageable. The ±20 V maximum gate rating allows direct drive from a 12 V or 15 V regulated supply without external clamping.
The gate threshold voltage is 4.5 V maximum at 200 µA drain current, but the Rds(on) is specified at 10 V drive. At 5 V gate drive the on-resistance will be significantly higher than the 660 mOhm maximum — expect 2–3× the rated value. For full performance, use a 10 V gate drive as recommended.