At 600 mOhm max, the on-resistance is on the higher side for a 650 V rated FET, but the low 23 nC gate charge compensates in frequency-sensitive designs. For a 100 kHz PFC stage, the switching losses from Qg dominate over conduction losses at light load; this part shifts the balance toward lower switching loss, which is why it fits auxiliary supplies and lower-power (< 150 W) SMPS where the inductor current is moderate.

IPP65R600E6 CoolMOS™ N-Channel MOSFET, 650 V, 7.3 A
Infineon CoolMOS™ IPP65R600E6, N-Channel MOSFET, 650 V Vdss, 7.3 A Id, 600 mOhm Rds(on) @ 2.1 A, 10 V, 23 nC Qg, TO-220-3 through-hole, -55 to 150 °C junction temperature.
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.3A (Tc) |
| Power dissipation | 63W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 210µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 2.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 440 pF @ 100 V |
Product details
Frequently asked questions
What is the replacement for IPP65R600E6?
No official replacement has been announced because the part remains active. For a pin-compatible alternative within the same CoolMOS™ family, consider the IPP65R600E6 itself — Infineon has not designated a successor. If a second source is needed, verify pin-compatibility with a part like the STMicroelectronics STP7NK65Z, but confirm the gate charge and Rds(on) match your switching frequency and load.
What is the closest pin-compatible alternative to IPP65R600E6 in this component family?
Within the Infineon CoolMOS™ 600E6 series, the IPP65R600E6 is the standard 600 mOhm variant. A higher-current sibling like the IPP65R380E6 (380 mOhm) is pin-compatible in the same TO-220-3 footprint but has a higher gate charge. For a direct electrical match, stay with the IPP65R600E6 or cross to a competitor's 600 mOhm, 650 V TO-220 N-channel FET, verifying Qg and Vgs(th) thresholds.