Rds(on) and gate charge — the trade-off that matters
At 600 mOhm max, the on-resistance is on the higher side for a 650 V rated FET, but the low 23 nC gate charge compensates in frequency-sensitive designs. For a 100 kHz PFC stage, the switching losses from Qg dominate over conduction losses at light load; this part shifts the balance toward lower switching loss, which is why it fits auxiliary supplies and lower-power (< 150 W) SMPS where the inductor current is moderate. The 440 pF input capacitance at 100 V drain-source confirms a modest Miller plateau — expect clean turn-on with a standard 10 V gate drive.
Temperature range and thermal design
Rated for a junction temperature range of -55 °C to 150 °C, the IPP65R600E6 handles outdoor telecom enclosures and industrial motor-drive environments without derating at the cold end. The 63 W maximum power dissipation at the case requires a heatsink for any continuous load above a few amps — the TO-220 tab is the primary thermal path, so plan for a thermal pad and a properly torqued screw to the heatsink.
Lifecycle and sourcing posture
Infineon continues to manufacture the CoolMOS™ series, and the part is available through independent distribution channels.