Skip to main content
Log in
Infineon Technologies IPP65R600C6

Infineon IPP65R600C6 CoolMOS N-Channel MOSFET, 650 V, 7.3 A

MPNIPP65R600C6
End of Life

Infineon CoolMOS™ IPP65R600C6, N-Channel MOSFET, 650 V Vdss, 7.3 A continuous drain, 600 mOhm Rds(on) at 10 V, 23 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$0.6Ref. price · indicative, final on quote
Infineon Technologies IPP65R600C6 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP65R600C6 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.3A (Tc)
Power dissipation63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 210µA
Rds on (Max) @ id, vgs600mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 100 V

Product details

Typical applications include flyback and forward converters in AC-DC power supplies, power-factor correction (PFC) stages, and auxiliary power rails in industrial and telecom equipment. The -55°C to 150°C junction temperature range suits it for outdoor and factory-floor environments where thermal cycling is a concern.

The 600 mOhm maximum on-resistance at 10 V gate drive and 2.1 A drain current sets the conduction loss for the 7.3 A continuous rating. The 23 nC gate charge at 10 V keeps driver losses low.

Frequently asked questions

What is the Rds(on) of IPP65R600C6?

The maximum on-resistance is 600 mOhm at a gate drive of 10 V and drain current of 2.1 A.