Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V drain-source, 8.7 A continuous drain, 420 mOhm Rds(on) at 10 V, 31.5 nC gate charge, TO-220-3 through-hole, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8.7A (Tc) |
| Power dissipation | 83.3W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 300µA |
| Rds on (Max) @ id, vgs | 420mOhm @ 3.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 870 pF @ 100 V |
Input capacitance is 870 pF at 100 V drain-source, a figure that influences the Coss-related turn-on loss in resonant topologies.
The PG-TO220-3 package is a through-hole TO-220 with a metal tab for heatsink attachment.
The maximum Rds(on) is 420 mOhm at 3.4 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations.
Yes, the IPP65R420CFDXKSA2 is ROHS3 compliant.