650 V CoolMOS™ CFD2 — the voltage-class anchor for 400 V bus designs
The Infineon IPP65R310CFDXKSA2 is an N-channel CoolMOS™ CFD2 MOSFET rated for 650 V drain-source breakdown, which gives you a solid 250 V of derating headroom above a typical 400 V DC bus in power-factor-correction stages or flyback converters.
The total gate charge at 10 V is 41 nC, which is a mid-range figure for a 650 V MOSFET in this current class. At a 100 kHz switching frequency, the average gate drive current needed is Qg × f = 4.1 mA — well within what a standard gate driver IC can source. The 1100 pF input capacitance at 100 V drain-source gives you a handle on the switching speed: the driver must charge and discharge this capacitance through the gate resistor to set the turn-on and turn-off slew rates.
Through-hole TO-220 — heatsink-friendly, hand-solderable
The PG-TO220-3 package is the classic three-lead through-hole power package. The metal tab is the drain connection, and the mounting hole accepts a standard TO-220 screw or clip to a heatsink.
Full military temperature span — industrial and outdoor power
The 150°C maximum junction temperature gives the thermal designer headroom to push the part to its rated 11.4 A continuous drain current at elevated ambient temperatures, as long as the case-to-heatsink thermal resistance is managed.
Threshold voltage and drive logic — 4.5 V max at 400 µA
The maximum gate threshold voltage is 4.5 V at 400 µA drain current, which means a standard 10 V gate drive is needed to achieve the rated 310 mOhm on-resistance.