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Infineon Technologies IPP65R125C7XKSA1
Infineon Technologies

Infineon IPP65R125C7XKSA1 CoolMOS C7 N-Ch MOSFET

MPNIPP65R125C7XKSA1
End of Life

Infineon CoolMOS™ C7 N-Channel MOSFET, IPP65R125C7XKSA1, 650 V Vdss, 18 A Id, 125 mOhm Rds(on) @ 10 V, 35 nC Qg, TO-220-3 through-hole, -55 to 150 °C.

$4.91Ref. price · indicative, final on quote
IPP65R125C7XKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP65R125C7XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation101W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 440µA
Rds on (Max) @ id, vgs125mOhm @ 8.9A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1670 pF @ 400 V

Product details

The IPP65R125C7XKSA1: Rds(on) is 125 mOhm at 10 V gate drive, 8.9 A. Gate charge is 35 nC at 10 V.

Switching loss budget and the 1670 pF input capacitance

Input capacitance Ciss is 1670 pF at 400 V Vds. Maximum gate-source voltage is ±20 V.

Thermal handling and the TO-220 package

Maximum power dissipation is 101 W at case temperature Tc, but the real limit depends on the heatsink and airflow. Threshold voltage Vgs(th) is 4 V max at 440 µA Id.

ROHS3 compliant, which covers the latest EU exemption updates; no conflict with RoHS-driven BOM requirements.

Frequently asked questions

What is the difference between CoolMOS C7 and P7?

CoolMOS C7 is Infineon's high-voltage MOSFET platform optimised for fast switching in hard-switching topologies like PFC and LLC converters, with low gate charge and low Rds(on). The P7 series targets ease-of-use with a wider SOA and more robust body diode for resonant topologies. The C7 typically has lower Qg and faster switching edges, while P7 offers better ruggedness in soft-switching applications.