Skip to main content
Infineon Technologies IPP65R115CFD7AAKSA1

Infineon IPP65R115CFD7AAKSA1 N-Channel MOSFET

MPNIPP65R115CFD7AAKSA1
End of Life

Infineon CoolMOS™ CFD7 Automotive series, IPP65R115CFD7AAKSA1, N-Channel MOSFET, 650 V Vdss, 21 A Id, 115 mOhm Rds(on) @ 10 V, 41 nC Qg, PG-TO220-3 package, -40°C to 150°C junction temperature.

$7.25Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP65R115CFD7AAKSA1 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation114W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 490µA
Rds on (Max) @ id, vgs115mOhm @ 9.7A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1950 pF @ 400 V

Product details

ROHS3 compliance is confirmed, covering the full EU RoHS exemption set. The AEC-Q101 qualification is part of the series designation, so the part is suitable for automotive PPAP submissions and industrial programs that require a known reliability baseline.

Package and mounting — through-hole for power dissipation

Housed in a PG-TO220-3 through-hole package, the part is designed for heatsink mounting on a PCB or chassis.

Frequently asked questions

What is the Rds(on) of IPP65R115CFD7?

The maximum on-resistance is 115 mOhm at a drain current of 9.7 A with a 10 V gate drive.

Is IPP65R115CFD7AAKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.