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Infineon Technologies IPP65R110CFDXKSA2

Infineon IPP65R110CFDXKSA2 CoolMOS CFD2 N-Ch 650V 31.2A

MPNIPP65R110CFDXKSA2
End of Life

Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V Vdss, 31.2 A Id, 110 mOhm Rds(on) @ 12.7 A, 10 V, 118 nC Qg, TO-220-3, Through Hole, -55°C to 150°C.

$6.25Ref. price · indicative, final on quote
Infineon Technologies IPP65R110CFDXKSA2 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS™ CFD2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP65R110CFDXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CFD2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C31.2A (Tc)
Power dissipation277.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 1.3mA
Rds on (Max) @ id, vgs110mOhm @ 12.7A, 10V
Gate charge (Qg) (Max) @ vgs118 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3240 pF @ 100 V

Product details

650 V switching in a TO-220 — the CoolMOS CFD2 choice

The IPP65R110CFDXKSA2 is rated at 650 V Vdss, suitable for power factor correction stages, flyback converters, and LLC resonant topologies in industrial and telecom power supplies.

At 31.2 A full load, conduction loss at 110 mOhm (ignoring temperature derating) is roughly 107 W; the 277.8 W maximum power dissipation in the TO-220 package gives thermal headroom for a properly heatsinked design, but the actual junction temperature rise must be calculated against the operating current and switching losses.

Frequently asked questions

Can I use the IPP65R110CFDXKSA2 in a 400V DC bus application?

Yes. The 650 V drain-source rating provides 250 V of headroom above a 400 V DC bus, which is typical for power factor correction and flyback stages. The margin covers switching overshoot and line transients.