650 V switching in a TO-220 — the CoolMOS CFD2 choice
The IPP65R110CFDXKSA2 is rated at 650 V Vdss, suitable for power factor correction stages, flyback converters, and LLC resonant topologies in industrial and telecom power supplies.
110 mOhm Rds(on) — conduction loss anchor
At 31.2 A full load, conduction loss at 110 mOhm (ignoring temperature derating) is roughly 107 W; the 277.8 W maximum power dissipation in the TO-220 package gives thermal headroom for a properly heatsinked design, but the actual junction temperature rise must be calculated against the operating current and switching losses.
Gate charge and switching speed
Total gate charge is 118 nC at 10 V gate drive, with an input capacitance of 3240 pF at 100 V drain-source — these numbers set the switching driver requirement and the transition loss budget. A gate driver capable of sourcing and sinking a few amperes peak is needed to charge and discharge 118 nC within the target dead-time; the ±20 V maximum gate-source rating accommodates standard gate drive levels with margin.