IPP65R099CFD7AAKSA1

Infineon Technologies · Automotive, AEC-Q101, CoolMOS™ CFD7A Series

Infineon CoolMOS™ CFD7A, Automotive AEC-Q101, N-Channel MOSFET, 650 V Vdss, 24 A continuous drain, 99 mOhm Rds(on) at 12.5 A and Vgs=10 V, 53 nC gate charge, TO-220-3 through-hole package, ROHS3 compliant.

Infineon Technologies IPP65R099CFD7AAKSA1
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Technical specifications

IPP65R099CFD7AAKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, CoolMOS™ CFD7A
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation127W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 630µA
Rds on (Max) @ id, vgs99mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2513 pF @ 400 V

Technical details

650 V CoolMOS™ CFD7A – the automotive traction and DC-DC MOSFET

The CFD7A series targets hard-switching topologies in automotive environments: traction inverters, on-board chargers, DC-DC converters, and high-voltage PFC stages. The 650 V rating gives headroom for 400 V nominal bus systems under load dump and transient overvoltage conditions.

Rds(on) is specified at 99 mOhm maximum at 12.5 A, Vgs=10 V — this is the conduction-loss anchor for thermal design. Paired with a total gate charge of 53 nC at Vgs=10 V, the part balances low conduction loss against moderate switching loss; it is not the lowest-Qg device in the 650 V class, but the CFD7A body diode is optimised for fast reverse recovery, reducing hard-switching turn-on loss in bridge legs. Input capacitance Ciss is 2513 pF at Vds=400 V, which sets the gate-driver current requirement.

The PG-TO220-3 package provides a low thermal resistance path through the exposed metal tab — the PCB heatsink pad and mounting torque directly affect RthJC.

IPP65R099CFD7AAKSA1
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