650 V CoolMOS™ CFD7A – the automotive traction and DC-DC MOSFET
The Infineon IPP65R099CFD7AAKSA1 is an N-channel enhancement-mode MOSFET from the CoolMOS™ CFD7A family, built for 650 V drain-source blocking in a TO-220-3 through-hole package. The CFD7A series targets hard-switching topologies in automotive environments: traction inverters, on-board chargers, DC-DC converters, and high-voltage PFC stages. The 650 V rating gives headroom for 400 V nominal bus systems under load dump and transient overvoltage conditions.
Rds(on) is specified at 99 mOhm maximum at 12.5 A, Vgs=10 V — this is the conduction-loss anchor for thermal design. Paired with a total gate charge of 53 nC at Vgs=10 V, the part balances low conduction loss against moderate switching loss; it is not the lowest-Qg device in the 650 V class, but the CFD7A body diode is optimised for fast reverse recovery, reducing hard-switching turn-on loss in bridge legs. Input capacitance Ciss is 2513 pF at Vds=400 V, which sets the gate-driver current requirement. For a 100 kHz switching frequency, the average gate-drive current is roughly 5.3 mA — well within a standard automotive gate-driver IC's capability.
Automotive qualification and temperature range
The 150 °C maximum junction temperature allows continuous operation at elevated ambient temperatures typical of engine bays and inverter enclosures. Maximum power dissipation is 127 W at case temperature 25 °C; derating above that follows the datasheet curve. The PG-TO220-3 package provides a low thermal resistance path through the exposed metal tab — the PCB heatsink pad and mounting torque directly affect RthJC.