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IPP65R095C7XKSA1

Infineon IPP65R095C7XKSA1 CoolMOS C7 N-Channel MOSFET, 650 V

MPNIPP65R095C7XKSA1
End of Life

Infineon CoolMOS™ C7 series, IPP65R095C7XKSA1, N-Channel MOSFET, 650 V Vdss, 24 A Id, 95 mOhm Rds(on), TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$7.08Ref. price · indicative, final on quote
Infineon Technologies IPP65R095C7XKSA1 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS™ C7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP65R095C7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ C7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C24A (Tc)
Power dissipation128W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 590µA
Rds on (Max) @ id, vgs95mOhm @ 11.8A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2140 pF @ 400 V

Product details

The 95 mOhm on-resistance at 10 V Vgs and 11.8 A is the conduction loss anchor.

Through-hole TO-220-3 — mounting and thermal path

Housed in a standard TO-220-3 (PG-TO220-3) through-hole package, this part bolts to a heatsink via the metal tab, which is electrically common with the drain.

If your line needs a known-good cross, the CoolMOS C7 family includes several 650 V TO-220 devices with similar Rds(on) and gate charge profiles — confirm pin compatibility and thermal specs against your operating point before substituting.

Frequently asked questions

What is the Rds(on) of IPP65R095C7XKSA1?

The maximum on-resistance is 95 mOhm at 10 V gate drive and 11.8 A drain current. This is the conduction loss spec to use in your dissipation calculation.