650 V, 90 mΩ — the hard-switching sweet spot
The Infineon IPP65R090CFD7XKSA1 is a 650 V N-channel CoolMOS™ CFD7 MOSFET in a TO-220-3 through-hole package. Its 90 mΩ maximum Rds(on) at 10 V gate drive and 25 A continuous drain rating place it in the sweet spot for hard-switching topologies like PFC boost stages, LLC half-bridge primaries, and flyback converters in the 300 W to 1 kW range. The 53 nC gate charge keeps driver losses manageable with a standard 1 A gate driver IC.
Gate drive and switching loss budgeting
With 53 nC total gate charge at 10 V and 2513 pF input capacitance at 400 V drain, the IPP65R090CFD7XKSA1 needs a gate driver capable of sourcing at least 1 A to hit the datasheet's typical rise and fall times. The 10 V drive voltage is the nominal for minimum Rds(on); driving at 12 V adds margin but stays within the ±20 V Vgs maximum. The 127 W power dissipation ceiling at case temperature means the TO-220 tab must be heatsunk for continuous operation above 10 A.
Temperature range and environment
Rated for -55 °C to 150 °C junction temperature, the IPP65R090CFD7XKSA1 suits industrial motor drives, outdoor telecom rectifiers, and automotive on-board charger stages where the thermal cycling range is wide. The TO-220-3 package with PG-TO220-3 supplier code is a standard through-hole footprint for heatsink mounting; the tab is the drain.
Lifecycle and sourcing
Infineon lists the IPP65R090CFD7XKSA1 as Active (current production) with ROHS3 compliance.