Infineon Technologies IPP65R090CFD7XKSA1 — DC-DC Power Modules
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Infineon Technologies / DC-DC Power Modules

Infineon IPP65R090CFD7XKSA1 CoolMOS CFD7 N-Channel MOSFET

MPN IPP65R090CFD7XKSA1
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Infineon CoolMOS™ CFD7 N-Channel MOSFET, 650 V Vdss, 25 A continuous drain, 90 mΩ Rds(on) at 10 V, 53 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C junction temperature.

In Stock: 500 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$6.98 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$6.98
10+ pcs
$6.28
30+ pcs
$5.72
100+ pcs
$5.17
500+ pcs
$4.82
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$6.98 / ea

500 in stock — maximum per order · 3–4 days lead time

$6.28 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-220-3
Output / Current 650 V

Full Technical Specifications

16 Parameters
IPP65R090CFD7XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ CFD7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation127W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 630µA
Rds on (Max) @ id, vgs90mOhm @ 12.5A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2513 pF @ 400 V
Series Sibling Variants

Infineon Technologies CoolMOS™ CFD7 Series Models

Sibling variants, package options, and speed/density grades in this Infineon Technologies semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

650 V, 90 mΩ — the hard-switching sweet spot

Its 90 mΩ maximum Rds(on) at 10 V gate drive and 25 A continuous drain rating place it in the sweet spot for hard-switching topologies like PFC boost stages, LLC half-bridge primaries, and flyback converters in the 300 W to 1 kW range. The 53 nC gate charge keeps driver losses manageable with a standard 1 A gate driver IC.

Gate drive and switching loss budgeting

With 53 nC total gate charge at 10 V and 2513 pF input capacitance at 400 V drain, the IPP65R090CFD7XKSA1 needs a gate driver capable of sourcing at least 1 A to hit the datasheet's typical rise and fall times. The 127 W power dissipation ceiling at case temperature means the TO-220 tab must be heatsunk for continuous operation above 10 A.

Infineon lists the IPP65R090CFD7XKSA1 as Active (current production) with ROHS3 compliance.

Frequently asked questions

What is the closest functional second-source for IPP65R090CFD7XKSA1?

The IPD50R950CEAUMA1 is a CoolMOS CE series part but it is a 500 V, 950 mΩ surface-mount device in a DPAK — different voltage rating, Rds(on) an order of magnitude higher, and a different footprint. It is not a pin-compatible or parametric replacement for the IPP65R090CFD7XKSA1.

Is IPP65R090CFD7XKSA1 RoHS compliant?

Yes, the IPP65R090CFD7XKSA1 is ROHS3 compliant per Infineon's lifecycle data.

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