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Infineon Technologies IPP60R750E6

Infineon IPP60R750E6 CoolMOS E6 N-Channel MOSFET, 600 V

MPNIPP60R750E6
End of Life

Infineon CoolMOS ™ series, N-Channel MOSFET, 600 V Vdss, 5.7 A continuous drain at 25°C, 750 mOhm Rds(on) at 2 A, 10 V, 17.2 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$0.51Ref. price · indicative, final on quote
Infineon Technologies IPP60R750E6 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS E6™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP60R750E6 specifications
ParameterValue
SeriesCoolMOS E6™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C5.7A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 170µA
Rds on (Max) @ id, vgs750mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs17.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds373 pF @ 100 V

Product details

The 750 mOhm Rds(on) at 2 A and 10 V is a moderate on-resistance for a 600 V device, which means conduction losses are not the primary concern in this part. This combination makes the IPP60R750E6 a good fit for medium-frequency hard-switching designs where switching losses dominate the thermal budget, rather than high-current continuous conduction.

Package and mounting — through-hole for thermal and mechanical robustness

The TO-220-3 through-hole package (Infineon code PG-TO220-3-1) allows direct mounting to a heatsink with a single screw.

The device is ROHS3 compliant, with no lead, mercury, cadmium, or other restricted substances above threshold limits. No end-of-life notices or last-time-buy windows are in effect for this ordering code.

Frequently asked questions

Is IPP60R750E6 RoHS compliant?

Yes, the IPP60R750E6 is ROHS3 compliant, meeting the latest European Union directive on restriction of hazardous substances.

What is the closest functional second-source for IPP60R750E6?

A functional alternative is the Infineon IPD50R950CEAUMA1, a 500 V N-channel CoolMOS CE device in a surface-mount package (DPAK). It offers a 950 mOhm Rds(on) at 1.2 A and 13 V, and a 10.5 nC gate charge. Note the lower voltage rating (500 V vs 600 V) and different package — verify pin compatibility and voltage headroom before substituting.