Skip to main content
Log in
Infineon Technologies IPP60R600CP

Infineon IPP60R600CP CoolMOS N-Ch MOSFET, 600 V, 6.1 A

MPNIPP60R600CP
End of Life

Infineon CoolMOS™ series, N-Channel MOSFET, 600 V Vdss, 6.1 A Id, 600 mOhm Rds(on) @ 10 V, 27 nC Qg, TO-220-3 through-hole, -55 to 150 °C TJ.

$0.64Ref. price · indicative, final on quote
Infineon Technologies IPP60R600CP datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP60R600CP specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6.1A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 220µA
Rds on (Max) @ id, vgs600mOhm @ 3.3A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds550 pF @ 100 V

Product details

Gate charge and drive — what 27 nC means for the BOM

It keeps the gate-drive energy per switching cycle low.

Package and mounting — TO-220-3 through-hole

The IPP60R600CP is supplied in the through-hole TO-220-3 package, Infineon code PG-TO220-3-1. The three-lead vertical-mount form factor is the standard for heatsink-clip or screw-mount attachment on a PCB or chassis. The metal tab is the drain. For thermal design, the maximum power dissipation is 60 W at the case temperature, but the actual allowable dissipation depends on heatsink thermal resistance and ambient conditions — derate per the thermal impedance curve in the datasheet.

It is ROHS3 compliant.

Frequently asked questions

What is the gate charge of IPP60R600CP?

The maximum gate charge (Qg) at 10 V gate drive is 27 nC. This value determines the energy per switching cycle the gate driver must supply.

IPP60R600CP vs IPP60R380CP: what are the differences?

The IPP60R380CP is a higher-current variant in the same 600 V CoolMOS family, with a lower Rds(on) of 380 mOhm and a higher drain current rating. The IPP60R600CP has a 600 mOhm Rds(on) and 6.1 A Id. The IPP60R380CP suits designs requiring lower conduction loss at higher current, while the IPP60R600CP fits applications where the slightly higher Rds(on) is acceptable and the lower gate charge may simplify the gate-drive budget.