Infineon CoolMOS™ IPP60R385CP, N-Channel MOSFET, 600 V Vdss, 9 A Id, 385 mOhm Rds(on) @ 10 V, 22 nC gate charge, TO-220-3 through-hole, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 340µA |
| Rds on (Max) @ id, vgs | 385mOhm @ 5.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 790 pF @ 100 V |
The input capacitance at 100 V drain-source is 790 pF.
The TO-220-3 package (PG-TO220-3-1) is a standard through-hole footprint. ROHS3 compliance means no lead in the solder finish.
For BOM freeze planning, this part does not carry a near-term obsolescence risk.
The maximum Rds(on) is 385 mOhm at 5.2 A drain current and 10 V gate drive.
The part is ROHS3 compliant, meaning it meets the latest EU RoHS directive with no lead, mercury, cadmium, or other restricted substances above the threshold limits.