IPP60R180C7XKSA1

Infineon Technologies · CoolMOS™ C7 Series

Infineon Technologies CoolMOS™ C7 series, N-Channel MOSFET, 600 V drain-source, 13 A continuous drain, 180 mOhm on-resistance, TO-220-3 through-hole package.

Infineon Technologies IPP60R180C7XKSA1
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Technical specifications

IPP60R180C7XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ C7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 260µA
Rds on (Max) @ id, vgs180mOhm @ 5.3A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1080 pF @ 400 V

Technical details

600 V, 13 A, 180 mOhm — the switching load it handles

The IPP60R180C7XKSA1: This part belongs to Infineon's CoolMOS C7 series, a high-voltage superjunction family optimized for hard-switching topologies like power-factor correction (PFC) stages, LLC converters, and flyback supplies in the 150 W to 500 W range.

Gate charge and switching speed

The input capacitance measures 1080 pF at 400 V drain-source, a moderate value that balances switching speed against EMI. For a 100 kHz hard-switched PFC, the switching losses are manageable with a standard bootstrap driver. The ±20 V gate-source maximum gives margin for gate-drive overshoot in noisy environments.

Thermal budget and package

Maximum power dissipation is 68 W at the case temperature, but the junction-to-ambient thermal resistance of the TO-220 package means a heatsink is required for any continuous current above a few amps. The through-hole TO-220-3 package (PG-TO220-3-1) is a standard footprint for board-level power stages.

IPP60R180C7XKSA1
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