Infineon CoolMOS™ C7 series, N-Channel MOSFET, 600 V drain-source, 13 A continuous drain current, 180 mOhm on-resistance, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 68W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 260µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 5.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1080 pF @ 400 V |
IPP60R180C7XKSA1 is an N-Channel MOSFET with 24 nC gate charge at Vgs = 10 V and 1080 pF input capacitance at 400 V drain-source bias.
Maximum power dissipation is 68 W at case temperature Tc, with the junction rated from -55°C to 150°C.
Yes, the IPP60R180C7XKSA1 is ROHS3 compliant, meeting the latest EU restriction-of-hazardous-substances directive for lead-free soldering processes.