Infineon CoolMOS™ CFD7 N-Channel MOSFET, 650 V Vdss, 14 A Id, 170 mOhm Rds(on) @ 6 A, 10 V, 28 nC Qg, TO-220-3 through-hole, -55 °C to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 75W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 300µA |
| Rds on (Max) @ id, vgs | 170mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1199 pF @ 400 V |
Housed in a PG-TO220-3 through-hole package — the standard three-lead power outline with a metal tab for heatsink attachment. The through-hole mount suits point-of-load and bulk power stages where mechanical retention and thermal transfer to a heatsink are preferred over surface-mount reflow.
170 mOhm maximum at 6 A drain current and 10 V gate drive.
Both are CoolMOS CFD7 650 V N-channel MOSFETs in TO-220-3. The IPP60R170CFD7XKSA1 has a lower Rds(on) (170 mOhm vs 190 mOhm) and a higher continuous drain current rating (14 A vs the 190 mOhm variant's rating). Pin-compatible in the same package, so a drop-in replacement is possible if the higher current capability and lower on-resistance are acceptable for the design.