Infineon CoolMOS™ P7 series, IPP60R160P7XKSA1, N-Channel MOSFET, 650V Vdss, 20A Id, 160mOhm Rds(on) @ 10V, 31nC Qg, TO-220-3, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 81W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 350µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 6.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1317 pF @ 400 V |
Total gate charge is 31 nC at 10 V. Input capacitance measures 1317 pF at 400 V drain bias.
Junction temperature spans -55°C to 150°C. The 81 W maximum power dissipation at case temperature is a package-and-heatsink limit.
The IPP60R160P7XKSA1 carries an Active lifecycle status and is ROHS3 compliant.
The typical on-resistance is 160 mOhm, measured at 6.3 A drain current with a 10 V gate drive.
Infineon's CoolMOS™ P7 series includes multiple Rds(on) and current ratings in the same TO-220-3 footprint. A lower on-resistance sibling (e.g., the IPP60R099P7XKSA1 at 99 mOhm) fits the same board layout if the application needs lower conduction loss.