Infineon CoolMOS™ P6 N-Channel MOSFET, 600V Vdss, 23.8A Id, 160mOhm Rds(on) @ 10V, 44nC Qg, TO-220-3, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P6 |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 23.8A (Tc) |
| Power dissipation | 176W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 750µA |
| Rds on (Max) @ id, vgs | 160mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2080 pF @ 100 V |
The IPP60R160P6XKSA1: Total gate charge is 44 nC at 10 V, and input capacitance measures 2080 pF at 100 V drain-source.
The 600 V drain-source rating covers universal AC input with margin for reflected voltage and leakage spikes in a single-switch flyback or PFC stage. Maximum power dissipation is 176 W at case temperature, but the junction range extends from -55°C to 150°C.
This is the figure to use for worst-case conduction loss calculations at 25°C junction.