Infineon CoolMOS™ P7 series, IPP60R120P7XKSA1, N-Channel MOSFET, 600 V Vdss, 26 A Id, 120 mOhm Rds(on) at 10 V, TO-220-3 through-hole, -55°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 26A (Tc) |
| Power dissipation | 95W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 410µA |
| Rds on (Max) @ id, vgs | 120mOhm @ 8.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1544 pF @ 400 V |
The on-resistance of 120 mOhm at 8.2 A, 10 V sets the conduction loss baseline. Input capacitance is 1544 pF at 400 V Vds.
The TO-220-3 package is a through-hole part.
It is ROHS3 compliant. The CoolMOS series is Infineon's mainstream high-voltage MOSFET platform.
The maximum on-resistance is 120 mOhm at 8.2 A drain current with a 10 V gate drive.
Yes, it is ROHS3 compliant.
Within the CoolMOS P7 family, Infineon offers several 600 V TO-220 devices with different Rds(on) values. The IPP60R120P7 is the 120 mOhm variant; the IPP60R099P7 (99 mOhm) and IPP60R180P7 (180 mOhm) are direct pin-compatible siblings for lower or higher conduction loss, respectively. No exact second-source cross is listed, but these share the same footprint and gate drive requirements.