Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V Vdss, 21 A Id, 105 mOhm Rds(on) @ 10 V, 42 nC Qg, TO-220-3, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Tc) |
| Power dissipation | 106W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.5V @ 470µA |
| Rds on (Max) @ id, vgs | 105mOhm @ 9.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1752 pF @ 400 V |
The IPP60R105CFD7XKSA1: Total gate charge is 42 nC at 10 V gate drive. Input capacitance is 1752 pF at 400 V drain-source.
The through-hole TO-220-3 package (PG-TO220-3) allows direct heatsink mounting with a screw or clip.
The series is Infineon's fast-switching superjunction family optimised for hard-switching and resonant topologies.
The IPP60R105CFD7XKSA1 is the current-generation CoolMOS™ CFD7 variant. Infineon's CFD7 series is the successor to the earlier CFD generation, with optimised switching behaviour and improved body-diode ruggedness. Verify the gate-drive voltage and switching frequency match your existing design before substituting.