600 V, 35 A N-channel in a TO-220 — the workhorse PFC switch
The IPP60R060C7XKSA1: This is the part you reach for when a boost PFC stage, an LLC half-bridge, or a flyback primary switch needs a through-hole TO-220-3 package that can be bolted to a heatsink and dissipate 162 W at the case. The 68 nC total gate charge at 10 V is moderate for this voltage class.
Drain-source voltage is rated 600 V. Input capacitance Ciss is 2850 pF at 400 V drain-source — that's the Miller plateau charge the driver must push through during the switching transition. The 68 nC Qg total at 10 V means a driver sourcing 1 A can turn the FET on in about 68 ns, which is fast enough for 100 kHz hard-switching without excessive ringing if the gate loop inductance is kept under 10 nH. Gate threshold voltage is specified at 4 V maximum with 800 µA drain current — a standard 10 V gate drive saturates the channel fully, pulling Rds(on) to its rated minimum. The ±20 V maximum gate-source rating gives margin for overshoot on a 12 V or 15 V gate drive rail.
The TO-220-3 package is a standard through-hole form factor that stores well on the shelf; no special dry-pack requirements beyond the normal anti-static bag. ROHS3 compliance is confirmed, which keeps it compatible with lead-free assembly processes and avoids the restricted-substance compliance checks that older parts sometimes trigger.
Where it fits — power conversion and industrial drives
The 600 V / 35 A rating with 60 mOhm Rds(on) places this MOSFET squarely in the sweet spot for 1–3 kW offline power supplies: boost PFC stages, two-switch forward converters, and LLC resonant half-bridges. The through-hole TO-220-3 package with a metal tab means you can bolt it to a chassis or heatsink with a thermal pad or mica insulator — the 162 W power dissipation rating assumes the case is held at 25 °C, so the actual heatsink must be sized to keep the case temperature below about 110 °C at full load.