600 V, 22 mOhm — the switching MOSFET for high-density power
The IPP60R022S7XKSA1 is a 600 V N-channel MOSFET with 22 mOhm maximum on-resistance at 12 Vgs.
Gate charge and switching speed — driver budget
Total gate charge is 150 nC at 12 Vgs, with an input capacitance of 5639 pF at 300 V drain.
Temperature range — field-ready from -55 to 150 °C
Junction temperature range spans -55 to 150 °C, which covers military, avionics, and downhole tool environments. The maximum power dissipation is 390 W at case temperature 25 °C — derate above that per the datasheet curve. In a 70 °C ambient with a heatsink, the practical continuous current is well below the 23 A headline; thermal design should budget for the RthJA of the TO-220-3 in the actual airflow.
Package and mounting — through-hole, no hot-air needed
PG-TO220-3-1 package, through-hole mount. Three leads, tab is drain — standard orientation, easy to verify with a multimeter before soldering. No fine-pitch alignment, no reflow profile; a soldering iron and a heatsink on the tab are all that is needed for a field swap.
Lifecycle and compliance
ROHS3 compliant.