Infineon OptiMOS™ series, N-Channel MOSFET, 250 V Drain-Source Voltage, 25 A Continuous Drain Current, 60 mOhm Rds(on) at 25 A, 10 V, Through-Hole TO-220-3, -55°C to 175°C Operating Temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 90µA |
| Rds on (Max) @ id, vgs | 60mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2350 pF @ 100 V |
The IPP600N25N3GXKSA1: Total gate charge is 29 nC at 10 V. Input capacitance is 2350 pF at 100 V drain-source.
Lifecycle status is active. ROHS3 compliant — no cadmium, lead, or mercury above the threshold limits.
Maximum on-resistance is 60 mOhm at 25 A drain current and 10 V gate drive. The gate threshold voltage is 4 V maximum at 90 µA drain current.