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Infineon Technologies IPP50R520CP
Infineon Technologies

Infineon IPP50R520CP CoolMOS N-Channel MOSFET, 500 V, 7.1 A

MPNIPP50R520CP
End of Life

Infineon CoolMOS™ series, IPP50R520CP, N-Channel MOSFET, 500 V Vdss, 7.1 A continuous drain, 520 mOhm Rds(on) at 10 V, 17 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C operating junction temperature.

$0.68Ref. price · indicative, final on quote
IPP50R520CP datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP50R520CP Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.1A (Tc)
Power dissipation66W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs520mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds680 pF @ 100 V

Product details

500 V CoolMOS N-channel in a TO-220

The device comes in a through-hole TO-220-3 package (PG-TO220-3-1), suited for high-voltage off-line power conversion in switched-mode power supplies, PFC stages, and lighting ballasts.

Gate charge and switching loss

Total gate charge Qg is 17 nC at Vgs = 10 V, and the input capacitance Ciss is 680 pF at Vds = 100 V. These numbers tell a design engineer that the FET can be driven with a modest gate-drive current — 17 nC at 100 kHz switching frequency draws only 1.7 mA from the driver, keeping the gate-drive loss low.

Thermal and operating range

Maximum power dissipation is 66 W at case temperature, with the TO-220 tab providing a direct thermal path to a heatsink — the limiting factor in a real design is the heatsink's thermal resistance, not the die itself.

Frequently asked questions

What is the Vds rating of IPP50R520CP?

The drain-to-source breakdown voltage (Vdss) is 500 V, making this MOSFET suitable for 400 VDC bus applications such as PFC stages and flyback converters.

How does IPP50R520CP compare to the surface-mount IPD50R950CEAUMA1?

The IPD50R950CEAUMA1 is a surface-mount DPAK (TO-252) device from the CoolMOS CE series with a higher 950 mOhm Rds(on) and lower 4.3 A current rating. The IPP50R520CP offers roughly half the on-resistance and 65% more current capacity, but requires a through-hole footprint and a heatsink for full power dissipation.