Infineon CoolMOS™ series, IPP50R520CP, N-Channel MOSFET, 500 V Vdss, 7.1 A continuous drain, 520 mOhm Rds(on) at 10 V, 17 nC gate charge, TO-220-3 through-hole package, -55 to 150 °C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7.1A (Tc) |
| Power dissipation | 66W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 250µA |
| Rds on (Max) @ id, vgs | 520mOhm @ 3.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 680 pF @ 100 V |
These numbers tell a design engineer that the FET can be driven with a modest gate-drive current — 17 nC at 100 kHz switching frequency draws only 1.7 mA from the driver, keeping the gate-drive loss low.
Maximum power dissipation is 66 W at case temperature, with the TO-220 tab providing a direct thermal path to a heatsink — the limiting factor in a real design is the heatsink's thermal resistance, not the die itself.
The drain-to-source breakdown voltage (Vdss) is 500 V, making this MOSFET suitable for 400 VDC bus applications such as PFC stages and flyback converters.
The IPD50R950CEAUMA1 is a surface-mount DPAK (TO-252) device from the CoolMOS CE series with a higher 950 mOhm Rds(on) and lower 4.3 A current rating. The IPP50R520CP offers roughly half the on-resistance and 65% more current capacity, but requires a through-hole footprint and a heatsink for full power dissipation.