IPP50R280CEXKSA1

Infineon Technologies · CoolMOS™ Series

Infineon CoolMOS™ IPP50R280CEXKSA1, N-Channel Super Junction MOSFET, 500V Vdss, 13A Id, 280mOhm Rds(on), 32.6nC Qg, TO-220-3, -55°C to 150°C.

Infineon Technologies IPP50R280CEXKSA1
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Technical specifications

IPP50R280CEXKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSuper Junction
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 350µA
Rds on (Max) @ id, vgs280mOhm @ 4.2A, 13V
Gate charge (Qg) (Max) @ vgs32.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds773 pF @ 100 V

Technical details

500 V Super Junction MOSFET in TO-220-3

The through-hole TO-220-3 package (PG-TO220-3-1) suits point-of-load power stages, PFC boost stages, and flyback converters where the designer wants a low-inductance source tab and a standard three-pin layout for heatsink mounting.

280 mOhm on-resistance and 32.6 nC gate charge

Maximum on-resistance is 280 mOhm at 4.2 A drain current with 13 V gate drive — the 13 V drive voltage is the recommended bias for minimum Rds(on) and matches the output of common PWM controller gate drivers. Total gate charge is 32.6 nC at 10 V, which means a 100 kHz hard-switched stage draws roughly 3.3 mA from the gate driver — well within the capability of a standard 1 A totem-pole driver, and the 773 pF input capacitance at 100 V Vds keeps the Miller plateau manageable for the feedback compensation loop.

Junction temperature range and thermal budget

Maximum power dissipation is 92 W at case temperature Tc — the TO-220 tab soldered to a copper island or bolted to a heatsink with thermal compound keeps the junction below 150°C at the 13 A continuous rating.

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