Infineon CoolMOS™ IPP50R199CPXK, N-Channel MOSFET, 500 V Vdss, 17 A Id, 199 mOhm Rds(on) @ 10 V, 45 nC Qg, TO-220-3, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 139W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 660µA |
| Rds on (Max) @ id, vgs | 199mOhm @ 9.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 100 V |
The 139 W package dissipation limit provides derating headroom for a properly heatsunk assembly.
The TO-220-3 (PG-TO220-3-1) footprint accepts standard heatsink clips and spring clamps; the exposed metal tab carries the drain potential, so insulating bushings or thermal pads are required for shared-heatsink layouts. Gate drive is specified at 10 V for the rated Rds(on); the ±20 V Vgs maximum allows headroom for ringing on long gate traces.
The maximum on-resistance is 199 mOhm at 10 V gate drive and 9.9 A drain current. This is the value used for conduction loss calculations in the power stage.
The CoolMOS CP series includes 500 V devices in the same TO-220-3 footprint at different Rds(on) levels — lower resistance parts for higher efficiency, higher resistance parts for cost-sensitive designs. The IPP50R199CPXK is the 199 mOhm variant in that range.