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Infineon Technologies IPP50R199CPXK
Infineon Technologies

Infineon IPP50R199CPXK CoolMOS N-Channel MOSFET

MPNIPP50R199CPXK
End of Life

Infineon CoolMOS™ IPP50R199CPXK, N-Channel MOSFET, 500 V Vdss, 17 A Id, 199 mOhm Rds(on) @ 10 V, 45 nC Qg, TO-220-3, -55 to 150 °C.

$1.87Ref. price · indicative, final on quote
IPP50R199CPXK datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP50R199CPXK Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation139W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 660µA
Rds on (Max) @ id, vgs199mOhm @ 9.9A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 100 V

Product details

199 mOhm on-resistance — what it means for the power stage

The 199 mOhm Rds(on) at 10 V gate drive and 9.9 A drain current sets the conduction loss floor for the design. The 139 W package dissipation limit provides derating headroom for a properly heatsunk assembly.

Temperature range and package

Junction temperature spans -55°C to 150°C, covering military and industrial extremes without derating. The TO-220-3 (PG-TO220-3-1) footprint accepts standard heatsink clips and spring clamps; the exposed metal tab carries the drain potential, so insulating bushings or thermal pads are required for shared-heatsink layouts. Gate drive is specified at 10 V for the rated Rds(on); the ±20 V Vgs maximum allows headroom for ringing on long gate traces.

Sourcing and lifecycle

The IPP50R199CPXK carries an Active product status, meaning Infineon continues to manufacture the part with no announced end-of-life.

Frequently asked questions

What is the Rds(on) of the IPP50R199CPXK?

The maximum on-resistance is 199 mOhm at 10 V gate drive and 9.9 A drain current. This is the value used for conduction loss calculations in the power stage.

What are the alternatives to the IPP50R199CPXK in the CoolMOS family?

The CoolMOS CP series includes 500 V devices in the same TO-220-3 footprint at different Rds(on) levels — lower resistance parts for higher efficiency, higher resistance parts for cost-sensitive designs. The IPP50R199CPXK is the 199 mOhm variant in that range.