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Infineon Technologies IPP50R190CEXKSA1

Infineon IPP50R190CEXKSA1 CoolMOS CE N-Ch 500V 18.5A TO-220

MPNIPP50R190CEXKSA1
End of Life

Infineon CoolMOS™ CE series, IPP50R190CEXKSA1, N-Channel MOSFET, 500 V Vdss, 18.5 A Id, 190 mOhm Rds(on) at 6.2 A, 13 V, 47.2 nC Qg, TO-220-3 through-hole, -55 to 150 °C.

$2.05Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPP50R190CEXKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C18.5A (Tc)
Power dissipation127W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 510µA
Rds on (Max) @ id, vgs190mOhm @ 6.2A, 13V
Gate charge (Qg) (Max) @ vgs47.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1137 pF @ 100 V

Product details

500 V, 190 mOhm — the SMPS workhorse

The 47.2 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies up to the 100 kHz range. It is built for the primary-side switch in 500 V-class offline power supplies — flyback converters, PFC boost stages, and half-bridge resonant converters. The TO-220-3 through-hole package (PG-TO220-3) allows direct heatsink mounting with a screw or clip, and the 127 W power dissipation at case temperature gives realistic headroom for a thermally-constrained design. Operating junction temperature spans -55 to 150 °C, covering industrial and automotive under-hood environments without derating at the high end.

The 190 mOhm maximum on-resistance is specified at 6.2 A drain current with a 13 V gate drive. This Rds(on) value is the conduction-loss anchor for a 500 V part in this current class — a 6 A rms primary current at 90 % duty cycle dissipates about 6.8 W in conduction alone. Input capacitance Ciss is 1137 pF at 100 V drain-source — a moderate value that keeps the Miller plateau manageable and reduces cross-conduction risk during hard-switched transitions. The 13 V recommended drive voltage (max Rds(on) condition) aligns with standard 12 V or 15 V gate-drive rails used in offline power ICs.

Active production, ROHS3, through-hole package

It is ROHS3 compliant, free of the six restricted substances plus the four phthalates. The through-hole TO-220-3 package ships in tube form, standard for this form factor. No official successor or cross-reference is listed by Infineon. The surface-mount sibling in the same CoolMOS™ CE family — the IPD50R950CEAUMA1 — shares the same 500 V rating and gate-drive voltage but offers a higher 950 mOhm Rds(on) and lower 4.3 A current rating in a DPAK package.

Frequently asked questions

What is the Rds(on) of IPP50R190CEXKSA1?

Maximum Rds(on) is 190 mOhm at 6.2 A drain current with a 13 V gate drive. This is the conduction-loss anchor for the part in a 500 V SMPS primary-side application.

Can IPP50R190CEXKSA1 replace a failed MOSFET in a 500V SMPS?

Yes — the 500 V Vdss, 18.5 A Id, and 190 mOhm Rds(on) make it a direct fit for the primary switch in most 500 V-class flyback, PFC boost, and half-bridge converters. Verify the gate-drive voltage (13 V recommended) and package footprint (TO-220-3) match the original part before fitting.