Infineon OptiMOS™ series, N-Channel MOSFET, 150V Vdss, 50A continuous drain, 20mOhm Rds(on) at 10V, 31nC gate charge, TO-220-3 through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 8V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 90µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1820 pF @ 75 V |
The IPP200N15N3GXKSA1: Maximum on-resistance is 20 mOhm at 50 A drain current and 10 V gate drive.
Junction temperature spans -55°C to 175°C. Maximum power dissipation is 150 W at case temperature.
The IPP200N15N3GXKSA1 carries an Active product status with ROHS3 compliance.
Maximum input capacitance is 1820 pF at 75 V drain-source. This moderate capacitance allows direct drive from most gate driver ICs without excessive crossover current.