Skip to main content
Infineon Technologies IPP180N10N3GXKSA1
Infineon Technologies

Infineon IPP180N10N3GXKSA1 N-Channel MOSFET

MPNIPP180N10N3GXKSA1
End of Life

Infineon OptiMOS N-Channel MOSFET, 100V drain-to-source voltage, 43A continuous drain current, 18mOhm Rds(on) at 10V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$1.23Ref. price · indicative, final on quote
IPP180N10N3GXKSA1 datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPP180N10N3GXKSA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C43A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 33µA
Rds on (Max) @ id, vgs18mOhm @ 33A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 50 V

Product details

100V, 43A N-channel MOSFET in a TO-220-3 package

The Infineon IPP180N10N3GXKSA1 is an N-channel enhancement-mode MOSFET from the OptiMOS series, rated for 100 V drain-to-source voltage and 43 A continuous drain current at 25°C case temperature. The 18 mOhm maximum on-resistance at 10 V gate drive (33 A test current) keeps conduction losses manageable in a 71 W power dissipation envelope. Gate charge is 25 nC at 10 V, and input capacitance is 1800 pF at 50 V drain-source, so the gate-drive requirement is modest for a 100 V part in this current class. The TO-220-3 through-hole package (PG-TO220-3) suits point-of-load switching, DC-DC converters, motor pre-drive stages, and secondary-side synchronous rectification. The -55°C to 175°C junction temperature range covers under-hood and industrial environments without derating concerns at the high end.

Rds(on) and gate-drive voltage

The 18 mOhm maximum on-resistance is specified at 10 V gate drive with 33 A drain current. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V.

Lifecycle and compliance

No end-of-life notification or last-time-buy window is in effect.

Frequently asked questions

What is the exact Rds(on) of IPP180N10N3GXKSA1 at 10V gate drive?

The maximum on-resistance is 18 mOhm at 10 V gate drive with 33 A drain current.

Can IPP180N10N3GXKSA1 be used as a replacement for IRFZ44N?

The IRFZ44N is a 55 V, 49 A N-channel MOSFET in TO-220. The IPP180N10N3GXKSA1 has a higher 100 V drain-source rating and similar current capability, but the gate threshold and drive voltage differ. Check the gate-drive voltage in your design — the IPP180N10N3GXKSA1 needs 10 V for minimum Rds(on) — and verify pin compatibility (both are TO-220-3).