Infineon OptiMOS N-Channel MOSFET, 100V drain-to-source voltage, 43A continuous drain current, 18mOhm Rds(on) at 10V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 43A (Tc) |
| Power dissipation | 71W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 33µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 33A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |
Gate charge is 25 nC at 10 V, and input capacitance is 1800 pF at 50 V drain-source, so the gate-drive requirement is modest for a 100 V part in this current class. The TO-220-3 through-hole package (PG-TO220-3) suits point-of-load switching, DC-DC converters, motor pre-drive stages, and secondary-side synchronous rectification.
The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V.
The maximum on-resistance is 18 mOhm at 10 V gate drive with 33 A drain current.
The IRFZ44N is a 55 V, 49 A N-channel MOSFET in TO-220. The IPP180N10N3GXKSA1 has a higher 100 V drain-source rating and similar current capability, but the gate threshold and drive voltage differ. Check the gate-drive voltage in your design — the IPP180N10N3GXKSA1 needs 10 V for minimum Rds(on) — and verify pin compatibility (both are TO-220-3).