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Infineon Technologies IPP147N12N3GXKSA1

Infineon IPP147N12N3GXKSA1 N-Channel MOSFET

MPNIPP147N12N3GXKSA1
End of Life

Infineon OptiMOS N-channel MOSFET, 120 V drain-source, 56 A continuous drain, 14.7 mOhm max Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55 to 175 °C junction temperature.

$1.93Ref. price · indicative, final on quote
Infineon Technologies IPP147N12N3GXKSA1 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPP147N12N3GXKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage120 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C56A (Ta)
Power dissipation107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 61µA
Rds on (Max) @ id, vgs14.7mOhm @ 56A, 10V
Gate charge (Qg) (Max) @ vgs49 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3220 pF @ 60 V

Product details

120 V, 56 A N-channel — the switching-loss and conduction-loss trade-off

The Infineon IPP147N12N3GXKSA1 is a 120 V, 56 A N-channel MOSFET from the OptiMOS series, in a TO-220-3 through-hole package. Gate charge totals 49 nC at 10 V. Input capacitance is 3220 pF at 60 V Vds.

175 °C junction — thermal headroom for industrial environments

For a motor-drive or PFC stage pulling 56 A at elevated ambient, the 107 W power dissipation ceiling at the case (Tc) means the heatsink must hold the case temperature within the SOA.

Frequently asked questions

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Can IPP147N12N3GXKSA1 replace IPP147N12N3G?

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